The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Jan. 25, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jennifer Y. Sun, Mountain View, CA (US);

Vahid Firouzdor, San Mateo, CA (US);

Biraja Prasad Kanungo, San Jose, CA (US);

Tom K Cho, Los Altos, CA (US);

Vedapuram S. Achutharaman, Saratoga, CA (US);

Ying Zhang, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/08 (2006.01); C04B 35/00 (2006.01); C04B 35/505 (2006.01); C04B 35/622 (2006.01); C04B 41/00 (2006.01); C04B 41/45 (2006.01); C04B 41/50 (2006.01); C04B 41/52 (2006.01); C04B 41/87 (2006.01); C04B 41/89 (2006.01); C23C 14/46 (2006.01); C23C 14/58 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 14/088 (2013.01); C04B 35/00 (2013.01); C04B 35/505 (2013.01); C04B 35/62222 (2013.01); C04B 41/009 (2013.01); C04B 41/4529 (2013.01); C04B 41/5045 (2013.01); C04B 41/52 (2013.01); C04B 41/87 (2013.01); C04B 41/89 (2013.01); C23C 14/08 (2013.01); C23C 14/083 (2013.01); C23C 14/46 (2013.01); C23C 14/5806 (2013.01); H01J 37/32477 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3222 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3246 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/3873 (2013.01); C04B 2235/428 (2013.01); C04B 2235/445 (2013.01); Y10T 428/26 (2015.01); Y10T 428/265 (2015.01);
Abstract

A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 μm. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol % to less than 100 mol % of YO, over 0 mol % to 60 mol % of ZrO, and 0 mol % to 9 mol % of AlO.


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