The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Mar. 07, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Akie Shimamura, Hiroshima, JP;

Kenichi Kusumoto, Hiroshima, JP;

Assignee:

MICRON TECHNOLOGY, INC., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02);
Abstract

Apparatuses and methods for fabricating multilayer structures are described. An example method includes: forming a conductive base layer including silicon; forming a first conductive layer including first conductive material above the conductive base layer; forming a conductive barrier layer above the conductive layer; performing thermal loading to form a second conductive layer including silicide of the first conductive material between the conductive base layer and the conductive barrier layer; and forming a third conductive layer above the conductive barrier layer.


Find Patent Forward Citations

Shimamura, Akie. (2025). Apparatuses of controlling cross-layer reactions in semiconductor device (U.S. Patent No. 12193219). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12193219

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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