The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Apr. 01, 2022
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Shu-Ming Li, Taichung, TW;

Tzu-Ming Ou Yang, Taichung, TW;

Chung-Ming Yang, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H10B 12/0335 (2023.02); H10B 12/482 (2023.02);
Abstract

A manufacturing method for a memory structure including the following steps is provided. A bit line structure is formed on the substrate. A contact structure is formed on the substrate on one side of the bit line structure. A capacitor structure is formed on the contact structure. The capacitor structure includes a first electrode, a second electrode and an insulating layer. The first electrode is disposed on the contact structure in a misaligned manner. The first electrode includes a first bottom surface and a second bottom surface. The first bottom surface is lower than the second bottom surface. The first bottom surface is disposed on the contact structure. The second electrode is located on the first electrode. The insulating layer is disposed between the first electrode and the second electrode.


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