The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Nov. 15, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
Feng Wu, Hefei, CN;
Sangyeol Park, Hefei, CN;
CHANIGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
The present disclosure provides a method of forming a semiconductor device and a semiconductor device. The method of forming a semiconductor device includes the following steps: providing a base, where the base includes a substrate and an array region located above the substrate, and the array region includes a first semiconductor structure and a first dielectric layer that covers a surface of the first semiconductor structure; forming, in the first dielectric layer, a groove exposing the first semiconductor structure, where the groove runs through the first dielectric layer along a direction parallel to a surface of the substrate; and filling the groove with a conductive material to form an array contact line.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile