The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Jul. 04, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shao-Te Wu, Hsinchu, TW;

Chia-Jung Chang, Hsinchu, TW;

Shih-Peng Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/012 (2006.01); G06F 30/392 (2020.01); H03K 5/00 (2006.01); H03K 17/687 (2006.01); H03K 19/0175 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6872 (2013.01); G06F 30/392 (2020.01); H03K 19/017509 (2013.01);
Abstract

A method of operating a power-on (PO) signal generator (which generates a PO signal and includes a supply-variation sensitivity-reducing (SVSR) load coupled between a first reference voltage and a first node, and a first transistor coupled between the first node and a second reference voltage, the SVSR load including a first resistor coupled between the first reference voltage and a second node, and a second transistor coupled between the second node and the first node, each of a control input of the SVSR load and a gate terminal the first transistor being coupled to a monitored voltage) includes: when the monitored voltage rises above a threshold voltage of the first transistor, turning on the first transistor, and pulling first and second voltages correspondingly on the first and second nodes, a third voltage of the second transistor, and the PO signal down to a logical low value.


Find Patent Forward Citations

Loading…