The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Sep. 25, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Jing-Cheng Lin, Hsinchu, TW;
Po-Hao Tsai, Taoyuan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/10 (2006.01); H01L 21/02 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/11 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 23/31 (2006.01); H01L 23/427 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 25/117 (2013.01); H01L 21/02354 (2013.01); H01L 21/6835 (2013.01); H01L 21/76883 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 24/03 (2013.01); H01L 24/09 (2013.01); H01L 24/11 (2013.01); H01L 24/14 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 21/486 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 22/14 (2013.01); H01L 23/3128 (2013.01); H01L 23/427 (2013.01); H01L 23/5389 (2013.01); H01L 23/562 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08111 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/1308 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32013 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/49113 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/83102 (2013.01); H01L 2224/97 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/0652 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06586 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/18161 (2013.01);
Abstract
A package structure includes a first semiconductor package and a second semiconductor package over the first semiconductor package. The first semiconductor package includes a dielectric structure, a semiconductor device on the dielectric structure, under bump metallization (UBM) structures in the dielectric structure. The USB structures each include a first region and a second region surrounded by the first region. The first region has more metal layers than the second region. The bumps are respectively on the second regions of the UBM structures.