The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Jun. 06, 2022
Applicant:

Ag Materials Technology Co., Ltd., Hsinchu, TW;

Inventors:

Tung-Han Chuang, Hsinchu, TW;

Po-Ching Wu, Hsinchu, TW;

Pei-Ing Lee, Hsinchu, TW;

Hsing-Hua Tsai, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); C23C 14/02 (2006.01); C23C 14/16 (2006.01); C23C 14/22 (2006.01); C23C 30/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/27 (2013.01); C23C 14/025 (2013.01); C23C 14/16 (2013.01); C23C 14/22 (2013.01); C23C 30/00 (2013.01);
Abstract

A nano-twinned structure on a metallic thin film surface is provided. The nano-twinned structure includes a substrate, an adhesive-lattice-buffer layer over the substrate, and a metallic thin film including Ag, Cu, Au, Pd or Ni over the adhesive-lattice-buffer layer. The bottom region of the metallic thin film has equi-axial coarse grains. The surface region of the metallic thin film contains parallel-arranged high-density twin boundaries (Σ3+Σ9) with a pitch from 1 nm to 100 nm. The quantity of the parallel-arranged twin boundaries is 50% to 80% of the total quantity of twin boundaries in the cross-sectional view of the metallic thin film. The parallel-arranged twin boundaries include 30% to 90% [111] crystal orientation. The nano-twinned structure on the metallic thin film surface is formed through a post-deposition ion bombardment on the evaporated metallic thin film surface after the evaporation process.


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