The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Nov. 16, 2022
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Nuo Wei Luo, Singapore, SG;

Huabiao Wu, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/68 (2006.01); G03F 7/00 (2006.01); H01L 21/027 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 21/682 (2013.01); G03F 7/70633 (2013.01); H01L 21/027 (2013.01); H01L 23/544 (2013.01);
Abstract

Provided is a semiconductor device includes a substrate, an isolation structure, an alignment mark, and a dielectric layer. The substrate includes a first region and a second region. The isolation structure is disposed in the substrate in the first region, wherein the isolation structure extends from a first surface of the substrate toward a second surface of the substrate. The alignment mark is disposed in the substrate in the second region. The alignment mark extends from the first surface of the substrate toward the second surface of the substrate and at the same level as the isolation structure. The dielectric layer is buried in the substrate in the second region and overlapping the alignment mark.


Find Patent Forward Citations

Loading…