The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Dec. 23, 2020
Multi-step isotropic etch patterning of thick copper layers for forming high aspect-ratio conductors
Intel Corporation, Santa Clara, CA (US);
Oladeji Fadayomi, Chandler, AZ (US);
Jeremy Ecton, Gilbert, AZ (US);
Oscar Ojeda, Chandler, AZ (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An integrated circuit device, comprising a substrate comprising a dielectric material and a conductor on or within the dielectric material of the substrate. The conductor comprises a first portion comprising a first sloped sidewall, wherein a first base width of the first portion is greater than a first top width of the first portion. The conductor also comprises a second portion over the first portion, the second portion comprising a second sloped sidewall, wherein a second base width of the upper portion is greater than both a second top width of the second portion and the first top width of the first portion.