The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
May. 26, 2022
Tokyo Electron Limited, Tokyo, JP;
Yutaka Motoyama, Yamanashi, JP;
Atsushi Endo, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes supplying a silicon-containing gas to a substrate having a recess formed in a surface of the substrate to deposit a silicon film in the recess, supplying, to the substrate, a first etching gas having a first etching profile in which an amount of etching for an upper portion of the recess in a depth direction and an amount of etching for a lower portion of the recess in the depth direction are different from each other, to etch the silicon film in the recess, supplying, to the substrate, a second etching gas having a second etching profile that is different from the first etching profile of the first etching gas to etch the silicon film in the recess, and additionally depositing the silicon film on the already deposited silicon film etched by the second etching gas.