The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Dec. 23, 2020
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventor:
Shigeki Tomishima, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/4763 (2006.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 21/02631 (2013.01); H01L 21/47635 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 29/247 (2013.01); H01L 29/66969 (2013.01); H01L 29/78693 (2013.01);
Abstract
An example two transistor (2T) gain cell memory with indium-gallium-zinc-oxide (IGZO) transistors. Examples include IGZO transistors included in a dynamic random access memory (DRAM) cell. The IGZO transistors included in the DRAM cell are described as being formed or created in a back end (BE) metal process stack of an integrated circuit chip or die.
Tomishima, Shigeki. (2025). Two transistor gain cell memory with indium gallium zinc oxide (U.S. Patent No. 12191135). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12191135
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile