The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Dec. 08, 2023
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Jengyi Yu, San Ramon, CA (US);

Samantha SiamHwa Tan, Newark, CA (US);

Seongjun Heo, Dublin, CA (US);

Ge Yuan, Fremont, CA (US);

Siva Krishnan Kanakasabapathy, Pleasanton, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/44 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32862 (2013.01); C23C 16/4405 (2013.01);
Abstract

A method for cleaning surfaces of a substrate processing chamber includes a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCl), carbon tetrachloride (CCl), a hydrocarbon (CHwhere x and y are integers) and molecular chlorine (Cl), boron trichloride (BCl), and thionyl chloride (SOCl); b) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; c) extinguishing the plasma and evacuating the substrate processing chamber; d) supplying a second gas including fluorine species; e) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; and f) extinguishing the plasma and evacuating the substrate processing chamber.


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