The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Jun. 13, 2022
Applicant:

Ferroelectric Memory Gmbh, Dresden, DE;

Inventor:

Tony Schenk, Dresden, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2273 (2013.01); G11C 11/221 (2013.01); G11C 11/2259 (2013.01);
Abstract

Various aspects relate to a destructive read out operation to read out a memory state of a remanent polarizable capacitive memory element. The destructive read out operation may include causing a voltage drop sequence over the remanent polarizable capacitive memory element, wherein the voltage drop sequence includes one or more voltage drops of a first polarity and one or more voltage drops of a second polarity opposite the first polarity. In some aspects, the destructive read out operation is configured as a bipolar read out operation to determine the memory state of the remanent polarizable capacitive memory element based on an electrical behavior of the remanent polarizable capacitive memory element during the voltage drop sequence.


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