The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Oct. 24, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jeremy Binfet, Boise, ID (US);

Tommaso Vali, Sezze, IT;

Walter Di Francesco, Avezzano, IT;

Luigi Pilolli, L'Aquila, IT;

Angelo Covello, Avezzano, IT;

Andrea D'Alessandro, Avezzano, IT;

Agostino Macerola, San Benedetto dei Marsi, IT;

Cristina Lattaro, Rieti, IT;

Claudia Ciaschi, Latina, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/061 (2013.01); G06F 3/0622 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01);
Abstract

In some implementations, a memory device may receive a command to read data in a first format from non-volatile memory, the data being stored in a second format in the non-volatile memory, the second format comprising a plurality of copies of the data in the first format. The memory device may compare, using an error correction circuit, the plurality of copies of the data to determine a dominant bit state for bits of the data. The memory device may store the dominant bit state for bits of the data in the non-volatile memory as error-corrected data in the first format. The memory device may cause the error-corrected data to be read from the non-volatile memory in the first format as a response to the command to read the data in the first format.


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