The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Dec. 23, 2021
Beijing Superstring Academy of Memory Technology, Beijing, CN;
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Weixing Huang, Beijing, CN;
Huilong Zhu, Beijing, CN;
BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, Beijing, CN;
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES, Beijing, CN;
Abstract
A semiconductor device and a method for manufacturing the same. A first electrode layer, a semiconductor layer, and a second electrode layer are formed on a substrate. The semiconductor layer is etched form a sidewall to form a cavity. A channel layer is formed at the cavity and sidewalls of the first electrode layer and the second electrode layer. The channel layer includes a first channel part located in the cavity and a second channel part located outside the cavity. The first channel part is filled with a dummy gate layer. The dummy gate layer is etched from a sidewall. The second channel part and the first channel part, which is in contact with upper and lower surfaces of the dummy gate layer are removed to form a recess. The recess is filled with a dielectric material to form an isolation sidewall.