Huilong Zhu

Title: Huilong Zhu: Innovator in Semiconductor Technology

Introduction

Huilong Zhu is a prominent inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving semiconductor memory structures and devices.

Latest Patents

Huilong Zhu's latest patents include innovative designs for semiconductor memory cell structures and devices. One of his notable inventions is a semiconductor memory cell structure that features a substrate, a first transistor layer, an isolation layer, and a second transistor layer. This design incorporates a first stack structure and a second stack structure, enhancing the performance of 2T0C type DRAM cells. The advantages of this invention include vertical stack integration, high integration levels, low leakage current, and reduced refresh times. Another significant patent involves a semiconductor device with a ferroelectric layer in a recess, which includes a substrate, a first electrode layer, a functional layer, and a second electrode layer. This design utilizes a C-shaped structure that enhances the memory capabilities of the device.

Career Highlights

Huilong Zhu has worked with notable institutions such as the Beijing Superstring Academy of Memory Technology and the Chinese Academy of Sciences. His experience in these organizations has allowed him to develop cutting-edge technologies in semiconductor memory.

Collaborations

Huilong Zhu has collaborated with esteemed colleagues, including Weixing Huang and Qi Wang, contributing to advancements in semiconductor research and development.

Conclusion

Huilong Zhu's innovative work in semiconductor technology has positioned him as a key figure in the field. His patents reflect a commitment to enhancing memory devices, showcasing his expertise and dedication to innovation.