The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Jan. 03, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Cheng-Ta Wu, Shueishang Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards an integrated circuit (IC). The IC includes a pair of source/drain regions in a substrate. A gate dielectric layer is on the substrate and laterally between the source/drain regions. A gate electrode overlies the gate dielectric layer. A sidewall liner is disposed along sidewalls of the gate electrode and along an upper surface of the substrate. A sidewall spacer overlies the substrate and is on sidewalls and an upper surface of the sidewall liner. The sidewall spacer has a pair of segments respectively on opposite sides of the gate electrode. The sidewall spacer consists essentially of silicon oxycarbonitride. A dielectric constant of the sidewall spacer is greater than that of the sidewall liner.