Integrated circuit with feol resistor

Abstract

A method includes forming a shallow trench isolation (STI) region in a semiconductor substrate thereby defining an active region and a passive region in the semiconductor substrate and spaced apart from each other by the STI region, forming a first sacrificial gate structure over the active region and a second sacrificial gate structure over the passive region, forming first source/drain regions in the active region and second source/drain regions in the passive region, after forming the first and second source/drain regions, replacing the first sacrificial gate structure with a metal gate structure and the second sacrificial gate structure with a metal resistor structure, the metal resistor structure corresponding to a dummy gate, forming a first gate contact over the metal gate structure, and a pair of resistor contacts over the metal resistor structure, and electrically coupling a set of metal lines with the metal resistor structure by the pair of resistor contacts.