The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Jun. 05, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chih-Fan Huang, Hsinchu, TW;
Yen-Ming Chen, Hsin-Chu, TW;
Chih-Sheng Li, Hsin-Chu, TW;
Hui-Chi Chen, Hsinchu County, TW;
Chih-Hung Lu, Hsinchu County, TW;
Dian-Hau Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a method includes depositing a first dielectric layer over a metal pad disposed over a workpiece, forming a first opening in the first dielectric layer to expose a portion of the metal pad, after the forming of the first opening, forming a second dielectric layer over the exposed portion of the metal pad, depositing a first polymeric material over the second dielectric layer, forming a second opening through the first polymeric material and the second dielectric layer to expose the metal pad, and forming a bump feature over the exposed metal pad.