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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12183677 B1

PDFFull Text
Date of Patent:
Dec. 31, 2024

Filed:

Dec. 01, 2023

Three-dimensional semiconductor device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sung-Hun Lee, Yongin-si, KR;

Seokjung Yun, Iksan-si, KR;

Chang-Sup Lee, Hwaseong-si, KR;

Seong Soon Cho, Suwon-si, KR;

Jeehoon Han, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Wasiul Haider

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10B 41/20 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 43/20 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/50 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H10B 41/20 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/20 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/50 (2023.02);
Abstract

A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

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