The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Feb. 24, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Jingwen Lu, Hefei, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/764 (2006.01); H01L 21/762 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/764 (2013.01); H10B 12/053 (2023.02); H10B 12/34 (2023.02); H10B 12/488 (2023.02);
Abstract

The present disclosure provides a method of manufacturing a semiconductor structure and a semiconductor structure. The method of manufacturing a semiconductor structure includes: providing a base, wherein the base includes an active region and a shallow trench isolation structure separating the active region, a word line trench is formed in the base, and the word line trench exposes a part of the active region and the shallow trench isolation structure; forming a first intermediate structure in the word line trenches, wherein the first intermediate structure covers side walls and a bottom wall of the word line trench, a first trench is formed in the first intermediate structure, the first intermediate structure includes a sacrificial structure, and the sacrificial structure includes a horizontal portion; and removing the horizontal portion of the sacrificial structure, and closing the first trench, and forming an air chamber.


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