The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Mar. 23, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Dohoon Kim, Seongnam-si, KR;
Wonwoong Chung, Incheon, KR;
Taehyung Kim, Seoul, KR;
Heejun Park, Cheongju-si, KR;
Handuck Song, Daejeon, KR;
Heonjong Jeong, Cheongju-si, KR;
Younglae Kim, Sejong-si, KR;
Byeongok Cho, Cheongju-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
WONIK MATERIALS, Cheongju-si, KR;
Abstract
An etching gas composition includes a first organofluorine compound having 3 to 6 carbon atoms, and an organosulfur compound having 1 to 4 sulfur atoms. The organosulfur compound may include a carbon-fluorine (C—F) bond, a carbon-sulfur (C—S) bond, at least one carbon-carbon double (—C═C—) bond. When the etching gas composition is used, excellent etch selectivity may be obtained, and the linearity and verticality of a pattern may be greatly increased by improving line edge roughness (LER) and line width roughness (LWR) due to an improvement in the roughness of an etched surface.