The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Oct. 01, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sangwoon Lee, Seoul, KR;
Joohyun Jeon, Hwaseong-si, KR;
Sungjin Kim, Hwaseong-si, KR;
Seunghyun Kim, Seoul, KR;
Wonki Roh, Yongin-si, KR;
Chulwoo Park, Seoul, KR;
Seongjae Byeon, Hwaseong-si, KR;
Taeyoon An, Hwaseong-si, KR;
Hyoeun Jung, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of modeling damages to a crystal caused by an incident particle includes obtaining particle information and crystal information; estimating energy loss of the incident particle based on the particle information and the crystal information; estimating a volume of a vacancy based on the energy loss; estimating a vacancy reaction based on the crystal information and the volume of the vacancy; and generating output data based on the vacancy reaction, the output data including quantification data of the damages.