The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Dec. 06, 2022
Methods of forming low resistivity titanium nitride thin film in horizontal vias and related devices
The Regents of the University of California, Oakland, CA (US);
Merck Patent Gmbh, Darmstadt, DE;
Andrew Kummel, San Diego, CA (US);
Cheng-Hsuan Kuo, San Diego, CA (US);
SeongUk Yun, Carlsbad, CA (US);
Ravindra Kanjolia, North Andover, MA (US);
Mansour Moinpour, San Jose, CA (US);
Daniel Moser, Manitowoc, WI (US);
The Regents of the University of California, Oakland, CA (US);
Merck Patent GmbH, Darmstadt, DE;
Abstract
A method of forming a conformal layer including TiN in a via includes introducing a precursor into a reaction chamber according to a first exposure schedule. The precursor includes non-halogenated metal-organic titanium. The first exposure schedule indicates precursor exposure periods. Each precursor exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the precursor during the particular duration of time. The method includes introducing a co-reactant into the reaction chamber according to a second exposure schedule. The co-reactant includes nitrogen. The second exposure schedule indicates co-reactant exposure periods. Each co-reactant exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the co-reactant during the particular duration of time. The method includes providing the conformal layer including TiN in the via based on said introducing the precursor and the co-reactant.