The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Aug. 31, 2021
Applicant:

Pusan National University Industry—university Cooperation Foundation, Busan, KR;

Inventors:

Se Young Jeong, Busan, KR;

You Sil Lee, Busan, KR;

Su Jae Kim, Busan, KR;

Sang Eon Park, Busan, KR;

Mi Yeon Cheon, Busan, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); H01J 37/32082 (2013.01); H01J 37/32798 (2013.01);
Abstract

There is provided an RF sputtering apparatus for controlling an atomic layer of a thin film. The RF sputtering apparatus includes: a sputtering main body including a substrate, a target facing the substrate, and a chamber for performing a sputtering process to deposit the target on the substrate; a power supply unit connected to the target of the sputtering main body via a network to apply RF power; a roughing pump unit for forming vacuum inside the chamber of the sputtering main body; and a gas supply unit for supplying reaction gas to the inside of the chamber. A power cable for supplying a power source to the power supply unit is formed with a single crystal copper wire.


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