The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Mar. 29, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Anthony J. Kanago, Boise, ID (US);

Jaydip Guha, Boise, ID (US);

Srinivas Pulugurtha, Boise, ID (US);

Soichi Sugiura, Bristow, VA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 11/4096 (2006.01); G11C 29/54 (2006.01); H01L 29/786 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); G11C 11/4096 (2013.01); G11C 29/54 (2013.01); H01L 29/78642 (2013.01); H01L 29/7869 (2013.01); H10B 12/50 (2023.02);
Abstract

Some embodiments include apparatuses and methods using the apparatuses. One of the embodiments includes a capacitor, a transistor coupled to the capacitor, the transistor and the capacitor included in a memory cell; the transistor including a channel structure, a gate including a portion located on a side of the channel structure, and a dielectric structure between the channel structure and the gate; and on-die circuitry configured to selectively apply a stress condition to the transistor to tune a threshold voltage of the transistor.


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