The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Dec. 07, 2020
Hangzhou Silicon-magic Semiconductor Technology Co., Ltd., Hangzhou, CN;
Jiakun Wang, Hangzhou, CN;
Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd, Hangzhou, CN;
Abstract
A trench MOSFET can include: a semiconductor layer having a first doping type; a trench extending from an upper surface of the semiconductor layer to internal portion of the semiconductor layer; insulating layers and electrode conductors located in the trench; a body region having a second doping type in an upper region of the semiconductor layer adjacent to the trench; and a floating region having the first doping type located in a predetermined position of the semiconductor layer adjacent to both sides of the trench, where the floating region is located below the body region and is separated from the body region.