The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Sep. 24, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ruilong Xie, Niskayuna, NY (US);
Oleg Gluschenkov, Tannersville, NY (US);
Andrew M. Greene, Slingerlands, NY (US);
Pietro Montanini, Albany, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41733 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01);
Abstract
A semiconductor structure comprises a substrate defining a first axis and a second axis in orthogonal relation to the first axis, first and second nanosheet stacks disposed on the substrate, a gate structure on each of the first and second nanosheet stacks, a source/drain region adjacent each of the first and second nanosheet stacks, a wrap-around contact disposed about each source/drain region and an isolator pillar disposed between the wrap-around contacts.