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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12176400 B1

PDFFull Text
Date of Patent:
Dec. 24, 2024

Filed:

Jul. 24, 2023

Backside contact with air spacer

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chen-Ming Lee, Taoyuan County, TW;

Wei-Yang Lee, Taipei, TW;

Assignee:

TAIWAN SEMINCODCUTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

HAYNES AND BOONE, LLP

Primary Examiner:

Changhyun Yi

Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/283 (2006.01); H01L 21/3213 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 21/283 (2013.01); H01L 21/32135 (2013.01); H01L 29/4175 (2013.01); H01L 29/66795 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor structure includes an active region including a source/drain feature, a contact protruding from a bottom surface of the source/drain feature, a first dielectric layer disposed directly below the active region and surrounding the contact, an air gap disposed between the contact and the first dielectric layer, and a seal disposed between the contact and the first dielectric layer, such that the air gap is disposed between the seal and the source/drain feature.

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Quick Actions:

Lee, Chen-Ming. (2024). Backside contact with air spacer (U.S. Patent No. 12176400). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12176400

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