The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Feb. 15, 2022
Applicant:
Nexperia B.v., Nijmegen, NL;
Inventors:
Assignee:
NEXPERIA B.V., Nijmegen, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49575 (2013.01); H01L 21/4825 (2013.01); H01L 21/4842 (2013.01); H01L 21/565 (2013.01); H01L 23/3107 (2013.01); H01L 23/4951 (2013.01); H01L 23/49562 (2013.01); H01L 23/49568 (2013.01); H01L 25/071 (2013.01); H01L 25/074 (2013.01);
Abstract
A semiconductor device is provided, including a MOSFET die, a first GaN die and a second GaN die. The first GaN die and the second GaN die are arranged in a cascode arrangement. The second GaN die is positioned in an inverted orientation. The MOSFET die controls the first GaN die and the second GaN die.