The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Jul. 20, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventor:
ChihCheng Liu, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); H01L 29/4238 (2013.01);
Abstract
Provided is a Plasma Induced Damage (PID) test structure and a semiconductor test structure, including: a gate structure, including a gate layer; a covering dielectric layer, located on a surface of the gate layer; a metal layer structure, located on a surface of the covering dielectric layer, the metal layer structure including at least one metal layer; and an extraction electrode, electrically connected with the gate layer via a conductive structure.