The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Apr. 25, 2022
International Business Machines Corporation, Armonk, NY (US);
Ruqiang Bao, Niskayuna, NY (US);
Dechao Guo, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of present invention provide a method of forming a transistor structure. The method includes receiving a first and a second gate region of a first and a second transistor, the second transistor being adjacent to the first transistor; forming a first work-function metal surrounding the first gate region; truncating the first work-function metal at a first boundary between the first transistor and the second transistor; forming one or more work-function metals surrounding the first gate region; truncating the one or more work-function metals at a second boundary between the first boundary and the second transistor; and forming another work-function metal surround the first and second gate regions. A transistor structure formed thereby is also provided.