The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Sep. 26, 2022
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Jung-Chuan Ting, Hsinchu County, TW;

I-Chen Yang, Miaoli County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 7/06 (2006.01); G11C 7/10 (2006.01); G11C 7/12 (2006.01); G11C 16/16 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1057 (2013.01); G11C 7/067 (2013.01); G11C 7/12 (2013.01);
Abstract

A memory device having a switching device for a page buffer is provided, and includes a plurality of switching units coupled between a memory cell array and a sense amplification circuit of the page buffer. Each of the plurality of switching units further comprising: a high voltage element and a low voltage element that are connected in series to each other. A first end of the high voltage element is coupled to the sense amplification circuit, and a first end of the low voltage element is coupled to a common source line of the memory cell array. A second end of the high voltage element and a second end of the low voltage element are connected to each other and coupled to a corresponding bit line of the memory cell array. The common source line coupled to each of the plurality of switching units shares a common active region.


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