The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Jun. 12, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chih-Yu Lin, Hsinchu, TW;
Wei-Cheng Wu, Hsinchu, TW;
Kao-Cheng Lin, Hsinchu, TW;
Yen-Huei Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A static random access memory includes a first and second memory cell array, a first word line, a bit line, a bit line bar, a primary driver circuit, and a first and second supplementary driver circuit. The first supplementary driver circuit is configured to pull a voltage of a first signal of the bit line or a second signal of the bit line bar to a first voltage level during a write operation in response to a supplementary driver circuit enable signal. The second supplementary driver circuit is configured to sense the voltage of the first or second signal. The second supplementary driver circuit includes a first pass-gate transistor. A first terminal of the first pass-gate transistor is coupled to a reference voltage supply. A second terminal of the first pass-gate transistor is electrically floating. A third terminal of the first pass-gate transistor is coupled to a first node.