The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Aug. 01, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chen-Jun Wu, Hsinchu, TW;

Yun-Feng Kao, Hsinchu, TW;

Sheng-Chih Lai, Hsinchu, TW;

Katherine H. Chiang, Hsinchu, TW;

Chung-Te Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4096 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4096 (2013.01);
Abstract

Disclosed herein are related to a memory device. In one aspect, the memory device includes a memory array including a set of memory cells. In one aspect, each of the set of memory cells includes a corresponding transistor and a corresponding capacitor connected in series between a bit line and a select line. In one aspect, the memory device includes a first transistor including a source/drain electrode coupled to a controller and another source/drain electrode coupled to the bit line. In one aspect, the memory device includes a second transistor including a gate electrode coupled to the bit line. In one aspect, the second transistor is configured to conduct current corresponding to data stored by a memory cell of the set of memory cells.


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