The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Sep. 22, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
An-Ren Zi, Hsinchu, TW;
Ching-Yu Chang, Yuansun Village, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/09 (2006.01); G03F 7/004 (2006.01); G03F 7/105 (2006.01); G03F 7/11 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
G03F 7/094 (2013.01); G03F 7/0045 (2013.01); G03F 7/105 (2013.01); G03F 7/11 (2013.01); H01L 21/0276 (2013.01); H01L 21/3086 (2013.01); H01L 21/3081 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes forming a resist structure including forming a resist layer including a resist composition over a substrate. After forming the resist layer, the resist layer is treated with an additive. The additive is one or more selected from the group consisting of a radical inhibitor, a thermal radical initiator, and a photo radical initiator.