The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Jan. 10, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;

Inventors:

Jyh-Shiou Hsu, Hsin-Chu, TW;

Wen-Hsun Tsai, Taichung, TW;

Chien-Chun Hu, Taichung, TW;

Kuang-Wei Cheng, Hsinchu, TW;

Sung-Ju Huang, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01D 46/10 (2006.01); B01D 29/01 (2006.01); B01D 35/30 (2006.01); B01D 39/20 (2006.01); B01D 61/18 (2006.01); H01L 21/67 (2006.01); H01L 21/673 (2006.01);
U.S. Cl.
CPC ...
B01D 46/10 (2013.01); B01D 29/016 (2013.01); B01D 35/30 (2013.01); B01D 39/2089 (2013.01); B01D 61/18 (2013.01); H01L 21/67393 (2013.01);
Abstract

A method is provided for supporting environmental control in a semiconductor wafer processing space, the method includes: flowing a first gas under pressure in a first direction through a first diffuser tube, thereby generating a first lateral flow of gas through a sidewall of the first diffuser tube; flowing a second gas under pressure in a second direction through a second diffuser tube, thereby generating a second lateral flow of gas through a sidewall of the second diffuser tube, the second direction being opposite the first direction; combining the first and second lateral flows of gas within a housing; and outputting the combined lateral flows of gas from the housing to produce a laminar gas flow covering an opening to the semiconductor wafer processing space.


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