The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2024

Filed:

Jul. 21, 2021
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventors:

Kevin Van Hoogdalem, Zoetermeer, NL;

Leonardus Kouwenhoven, The Hague, NL;

Pavel Aseev, The Hague, NL;

Peter Krogstrup Jeppesen, Copenhagen, DK;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 69/00 (2023.01); C23C 14/28 (2006.01); C30B 11/12 (2006.01); C30B 23/06 (2006.01); H01L 29/06 (2006.01); H10N 60/01 (2023.01); H10N 60/10 (2023.01); H10N 60/82 (2023.01); B82Y 10/00 (2011.01); G06N 10/00 (2022.01);
U.S. Cl.
CPC ...
H10N 69/00 (2023.02); C23C 14/28 (2013.01); C30B 11/12 (2013.01); C30B 23/06 (2013.01); H01L 29/0669 (2013.01); H10N 60/01 (2023.02); H10N 60/0801 (2023.02); H10N 60/0884 (2023.02); H10N 60/10 (2023.02); H10N 60/82 (2023.02); B82Y 10/00 (2013.01); G06N 10/00 (2019.01);
Abstract

Various fabrication methods are disclosed. In one such method, at least one structure is formed on a substrate which protrudes outwardly from a plane of the substrate. A beam is used to form a layer of material, at least part of which is in direct contact with a semiconductor structure on the substrate, the semiconductor structure comprising at least one nanowire. The beam has a non-zero angle of incidence relative to the normal of the plane of the substrate such that the beam is incident on one side of the protruding structure, thereby preventing a portion of the nanowire in a shadow region adjacent the other side of the protruding structure in the plane of the substrate from being covered with the material.


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