The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2024

Filed:

Mar. 22, 2024
Applicant:

Diodes Incorporated, Plano, TX (US);

Inventors:

Tao Long, Shanghai, CN;

Ze Rui Chen, Plano, TX (US);

Pin-Hao Huang, New Taipei, TW;

Paul Keith Gurry, Oldham, GB;

Li-Hsien Chou, New Taipei, TW;

Assignee:

Diodes Incorporated, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/768 (2006.01); H01L 21/8232 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/86 (2006.01);
U.S. Cl.
CPC ...
H01L 29/86 (2013.01); H01L 21/308 (2013.01); H01L 21/76831 (2013.01); H01L 21/8232 (2013.01); H01L 21/8234 (2013.01); H01L 29/0684 (2013.01); H01L 29/1608 (2013.01); H01L 29/42356 (2013.01); H01L 21/823437 (2013.01);
Abstract

A semiconductor rectifier device comprises: an epitaxial layer having a top surface and a bottom surface; a first trench comprising a first side wall, a second side wall, and a first bottom surface; a second trench adjacent to the first trench, the second trench comprising a third side wall, a fourth side wall, and a second bottom surface; a first doped region abutting against the first side wall and at least a part of the first bottom surface of the first trench; a second doped region adjacent to and separated from the first doped region, wherein the second doped region abuts against the third side wall, the fourth side wall and the second bottom surface of the second trench; a gate structure disposed on the top surface between the first trench and the second trench; and a contact metal layer disposed on the top surface of the epitaxial layer.


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