The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2024
Filed:
Feb. 27, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/005 (2013.01); G11C 11/1657 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); G11C 17/16 (2013.01); G11C 17/18 (2013.01); H10B 61/22 (2023.02);
Abstract
A memory device includes a plurality of magnetoresistive random-access memory (MRAM) cells including a first one-time programmable (OTP) MRAM cell. A first OTP select transistor is connected to the first OTP MRAM cell. The first OTP select transistor configured to selectively apply a breakdown current to the first OTP MRAM cell to write the first OTP MRAM cell to a breakdown state.