The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2024

Filed:

Aug. 16, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Guangchang Ye, Hubei, CN;

Lu Guo, Hubei, CN;

Zhongchen Huo, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0655 (2013.01); G06F 3/0619 (2013.01); G06F 3/0679 (2013.01);
Abstract

The present disclosure provides a memory system for selecting from among a plurality of read retry routines based on metadata. The memory system can include one or more memory devices and a memory controller. The memory controller can also detect a failure of a read operation. The memory controller can also analyze a set of values that correspond to a set of effectors of the read operation. The memory controller can select one or more read retry routines from a plurality of read retry routines based on the analyzing. Each of the plurality of read retry routines can associated with a different effector from the set of effectors and a read voltage that corresponds to the different effector. The memory controller can also perform the selected one or more read retry routines at the portion of the one or more memory devices to negate the failure of the read operation.


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