The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2024

Filed:

Dec. 07, 2018
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Cyrus Emil Tabery, San Jose, CA (US);

Simon Hendrik Celine Van Gorp, Oud-Turnhout, BE;

Simon Philip Spencer Hastings, San Jose, CA (US);

Brennan Peterson, Longmont, CO (US);

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); H01L 21/66 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70683 (2013.01); G03F 7/70625 (2013.01); G03F 7/70633 (2013.01); H01L 22/32 (2013.01); H01L 23/544 (2013.01); H01L 2223/54426 (2013.01);
Abstract

A measurement mark is disclosed. According to certain embodiments, the measurement mark includes a set of first test structures developed in a first layer on a substrate, each of the set of first test structures comprising a plurality of first features made of first conducting material. The measurement mark also includes a set of second test structures developed in a second layer adjacent to the first layer, each of the set of second test structures comprising a plurality of second features made of second conducting material. The measurement mark is configured to indicate connectivity between the set of first test structures and associated second test structures in the set of second test structures when imaged using a voltage-contrast imaging method.


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