The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Jun. 14, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Qian Tao, Boise, ID (US);
Matthew N. Rocklein, Boise, ID (US);
Beth R. Cook, Meridian, ID (US);
D. V. Nirmal Ramaswamy, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); H01L 49/02 (2006.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H01L 28/60 (2013.01); H10N 70/021 (2023.02); H10N 70/041 (2023.02); H10N 70/20 (2023.02); H10N 70/841 (2023.02); H10N 70/881 (2023.02); H10N 70/8836 (2023.02);
Abstract
A method of forming a ferroelectric memory cell. The method comprises forming an electrode material exhibiting a desired dominant crystallographic orientation. A hafnium-based material is formed over the electrode material and the hafnium-based material is crystallized to induce formation of a ferroelectric material having a desired crystallographic orientation. Additional methods are also described, as are semiconductor device structures including the ferroelectric material.