The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Jul. 14, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Nuo Xu, Milpitas, CA (US);
Zhiqiang Wu, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/22 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
H01L 29/40111 (2019.08); G11C 11/221 (2013.01); G11C 11/223 (2013.01); H01L 29/512 (2013.01); H01L 29/513 (2013.01); H01L 29/66666 (2013.01); H01L 29/66795 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09); H10B 51/20 (2023.02); H10B 51/30 (2023.02); G11C 11/2259 (2013.01); H01L 29/517 (2013.01); H01L 29/785 (2013.01); H01L 29/7853 (2013.01);
Abstract
A method includes: providing a substrate including a planar portion and a mesa portion over the planar portion; depositing an oxide layer over the mesa portion; depositing a ferroelectric material strip over the oxide layer and aligned with the mesa portion; and depositing a gate strip crossing the ferroelectric material strip and over the oxide layer.