The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Oct. 27, 2023
Applicant:
Silanna Uv Technologies Pte Ltd, Singapore, SG;
Inventor:
Petar Atanackovic, Henley Beach South, AU;
Assignee:
Silanna UV Technologies Pte Ltd, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 29/32 (2006.01); H01L 21/225 (2006.01); H01L 29/24 (2006.01); H01L 31/032 (2006.01); H01L 33/00 (2010.01); H01L 33/26 (2010.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); C30B 29/32 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02631 (2013.01); H01L 21/2252 (2013.01); H01L 31/032 (2013.01); H01L 33/0029 (2013.01); H01L 33/26 (2013.01);
Abstract
Various forms of MgGeOare disclosed, where an epitaxial layer comprises single crystal MgGeO, with x having a value of 0≤x<1, wherein the single crystal MgGeOhas a crystal symmetry compatible with a substrate or with an underlying layer on which the single crystal MgGeOis grown. Semiconductor structures and devices comprising the epitaxial layer of MgGeOare disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices.