The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2024

Filed:

Sep. 18, 2023
Applicant:

Lodestar Licensing Group Llc, Evanston, IL (US);

Inventors:

Kamal M. Karda, Boise, ID (US);

Haitao Liu, Boise, ID (US);

Si-Woo Lee, Boise, ID (US);

Fatma Arzum Simsek-Ege, Boise, ID (US);

Deepak Chandra Pandey, Almora, IN;

Chandra V. Mouli, Boise, ID (US);

John A. Smythe, III, Boise, ID (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/76224 (2013.01); H10B 12/053 (2023.02); H10B 12/31 (2023.02); H10B 12/34 (2023.02);
Abstract

An example apparatus includes a first source/drain region and a second source/drain region formed in a substrate to form an active area of the apparatus. The first source/drain region and the second source/drain region are separated by a channel. The apparatus includes a gate opposing the channel. A sense line is coupled to the first source/drain region and a storage node is coupled to the second source/drain region. An isolation trench is adjacent to the active area. The trench includes a dielectric material with a conductive bias opposing the conductive bias of the channel in the active area.


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