The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2024

Filed:

Oct. 15, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Nicolas Loubet, Guilderland, NY (US);

Huiming Bu, Glenmont, NY (US);

Balasubramanian Pranatharthiharan, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/3115 (2006.01); H01L 21/84 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/02532 (2013.01); H01L 21/0259 (2013.01); H01L 21/3115 (2013.01); H01L 21/84 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/66553 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device including a substrate; a continuous buried oxide layer (BOX) formed on the substrate; and a plurality of nanosheet gate-all-round (GAA) device structures on the BOX, wherein a first plurality of stacked gates of the nanosheet GAA device structures are disposed in a logic portion of the substrate and have a first nanosheet width, wherein a second plurality of stacked gates of the nanosheet GAA device structures are disposed in a high density region of the substrate and have a second nanosheet width less than the first nanosheet width, wherein the nanosheet GAA device structures are disposed directly on the continuous buried oxide layer, and wherein a bottom layer of the nanosheet GAA device structures is a bottom gate formed directly on the BOX.


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