The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Aug. 26, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
Ching-Lun Ma, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A semiconductor structure includes a substrate, a gate dielectric layer and a conductive layer that are stacked, and the gate dielectric layer is located between the substrate and the conductive layer. The substrate includes a semiconductor substrate and an insulating substrate which are arranged on the same layer. The conductive layer includes: a gate conductor layer, a projection of which on the substrate covers the semiconductor substrate, and an external connecting layer, a projection of which on the substrate covers the insulating substrate. A groove is formed on a bottom surface, towards the substrate, of the external connecting layer and the groove is filled with an insulator.