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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12165998 B1

PDFFull Text
Date of Patent:
Dec. 10, 2024

Filed:

Aug. 17, 2022

Semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Tohru Shirakawa, Matsumoto, JP;

Yasunori Agata, Matsumoto, JP;

Naoki Saegusa, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:

Wasiul Haider

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/66 (2006.01); H01L 29/417 (2006.01); H01L 23/29 (2006.01); H01L 29/45 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 22/32 (2013.01); H01L 24/06 (2013.01); H01L 29/41708 (2013.01); H01L 23/296 (2013.01); H01L 29/456 (2013.01); H01L 29/7397 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05012 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05019 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/05559 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/0615 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/0715 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/186 (2013.01);
Abstract

There is provided a semiconductor device including: a pad portion that is provided above the upper surface of the semiconductor substrate and that is separated from the emitter electrode; a wire wiring portion that is connected to a connection region on an upper surface of the pad portion; a wiring layer that is provided between the semiconductor substrate and the pad portion and that includes a region overlapping the connection region; an interlayer dielectric film that is provided between the wiring layer and the pad portion and that has a through hole below the connection region; a tungsten portion that contains tungsten and that is provided inside the through hole and electrically connects the wiring layer and the pad portion; and a barrier metal layer that contains titanium and that is provided to cover an upper surface of the interlayer dielectric film below the connection region.

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