The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Jan. 14, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Jung Chang, Hsinchu, TW;
Nien-Yu Tsai, Hsinchu, TW;
Min-Yuan Tsai, Hsinchu, TW;
Wen-Ju Yang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
An IC device includes an interlayer dielectric (ILD), a first tower structure embedded in the ILD, and a first ring region including a portion of the ILD that extends around the first tower structure. The first tower structure includes a plurality of first conductive patterns in a plurality of metal layers, and a plurality of first vias between the plurality of metal layers along a thickness direction of the IC device. The plurality of first conductive patterns and the plurality of first vias are coupled to each other to form the first tower structure. The plurality of first conductive patterns is confined by the first ring region, without extending beyond the first ring region. The first tower structure is a dummy tower structure.